氧气分压对磁控溅射法制备ZAO膜的影响

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Journal of Wuhan University of Technology ›› 2005, Vol. 27 ›› Issue (1) : 14-15.
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Effect of Oxygen Partial Pressure on the Properties of ZAO Thin Film Prepared by DC Magnetron Sputtering YU Jun,ZHAO Qing-nan,ZHAO Xiu-jian (Key Laboratory for Silicate Materials Science and Engineering of Ministry of Education, Wuhan University of Technology,Wuhan 430070,China)In this paper, ZAO thin films were deposited on glass subtracted by DC magnetron sputtering and effects of oxygen partial pressure on the structural, optical and electrical properties of ZAO films were studied. The results show that when the oxygen partial pressure is at 0 Pa, ZAO films have good crystal structure, its resistance is the lowest and the transmittance is much higher.magnetron-sputtering; ZAO films; oxygen partial pressure

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