利用传统紫外光曝光方式,通过扫描电镜观察了刻蚀后样品的表面形貌,定性地讨论前烘工艺对MEMS三维结构的影响。得到优化的工艺为:在对氧化后的硅片进行标准清洗,烘箱温度200℃活化表面30 min。涂胶旋转速度600 r/min,旋转15 s,曝光时间为17 s的条件下,最佳前烘温度为80℃,时间为30 min。研究结果为微器件的制造提供了一些可靠的工艺参数。

Effect of Soft-baking of BN-303 Photo-resist on 3D Structure of MEMS in Micro-fabricationJIANG Yu-rong,HE Yong,LI Zhi-wei,ZHOU Jian,OUYANG Shi-xi(State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,China)This paper was the experimental research of photographic progress on BN-303 photo-resist,in which the ultraviolet light was used in exposure.The surface morphology was observed with SEM.It was discussed that the effect of soft-baking on 3D structure of MEMS,qualitatively.Finally,the optimized technical parameters obtained through experiments were as follows:Soft-baking time was 80 ℃ and soaking time was 30 min,under the condition of cleaning oxidized silicon mask with standard methods,activating sample surface for 30 min at drying temperature 200 ℃,coating photo-resist at 6 000 r/min of rotating speed for 15 s with 17 s of exposure time.The above research results might provide some reliable technical parameters for fabricating micro-device.photo-graphy;BN-303 photo-resist;soft-baking;development